 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| AF60N03 N-Channel Enhancement Mode Power MOSFET Features - Simple Drive Requirement - Low Gate Charge - Fast Switching - RoHS Compliant - Pb Free Plating Product General Description The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. ID (A) 45 Product Summary BVDSS (V) 30 RDS(ON) (m) 12 Pin Assignments (Front View) 3 2 1 D G S Pin Descriptions Pin Name S G D Description Source Gate Drain Ordering information AX Feature F :MOSFET PN 60N03 X X Package D: TO-252 Packing Blank : Tube or Bulk A : Tape & Reel Block Diagram D S G This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.0 Sep 8, 2005 1/5 AF60N03 N-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS=10V Pulsed Drain Current (Note 1) Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range TC=25C TC=100C TC=25C Rating 30 20 45 32 120 44 0.352 -55 to 175 -55 to 175 Units V V A A W W/C C C Thermal Data Symbol RJC RJA Parameter Thermal Resistance Junction-Case Thermal Resistance Junction- Ambient Max. Max. Maximum 3.4 110 Units C/W C/W Electrical Characteristics (TJ=25C unless otherwise noted) Symbol BVDSS BVDSS/TJ RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Static Drain-Source On-Resistance (Note 2) Gate Threshold Voltage Forward Transconductance (Note 2) Drain-Source Leakage Current (TJ=25C) Drain-Source Leakage Current (TJ=175C) Gate Source Leakage Total Gate Charge (Note 2) Gate-Source Charge Gate-Drain ("Miller") Charge Turn-On Delay Time (Note 2) Rise Time Turn-Off Delay Time Fall-Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS=0V, ID=250uA Reference to 25C, ID=1mA VGS=10V, ID=20A VGS=4.5V, ID=15A VDS= VGS, ID=250uA VDS=10V, ID=10A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=20V ID=20A VDS=20V VGS=4.5V VDS=15V ID=20A RG=3.3, VGS=10V RD=0.75 VGS=0V VDS=25V, f=1.0MHz Min. 30 1 Limits Typ. 0.026 25 11.6 3.9 7 8.8 57.5 18.5 6.4 1135 200 135 Max. 12 25 3 1 uA 250 100 nA nC Unit V V/C m V S nS pF Source-Drain Diode Symbol Parameter VSD Forward On Voltage (Note 2) trr Reverse Recovery Time Qrr Reverse Recovery Charge Note 1: Pulse width limited by safe operating area. Note 2: Pulse width < 300us, duty cycle < 2%. Test Conditions IS=45A, VGS=0V IS=20A, VGS=0V, dl/dt=100A/s Min. - Typ. 23.3 16 Max. 1.3 - Unit V ns nC Anachip Corp. www.anachip.com.tw 2/5 Rev. 1.0 Sep 8, 2005 AF60N03 N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature Anachip Corp. www.anachip.com.tw 3/5 Rev. 1.0 Sep 8, 2005 AF60N03 N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Anachip Corp. www.anachip.com.tw 4/5 Rev. 1.0 Sep 8, 2005 AF60N03 N-Channel Enhancement Mode Power MOSFET Marking Information TO-252 ( Top View) Logo Part Number 60N03 YYWWX YY : Year WW: Nth week X : Internal code ( Optional) Package Information Package Type: TO-252 D D1 E2 E3 B1 e A2 e R: 0.127~0.381 F1 A3 (0.1mm) 1. All Dimensions Are in Millimeters. 2. Dimension Does Not Include Mold Protrusions. Symbol A2 A3 B1 D D1 F F1 E1 E2 E3 e C Dimensions In Millimeters Min. Nom. Max. 1.80 2.30 2.80 0.40 0.50 0.60 0.40 0.70 1.00 6.00 6.50 7.00 4.80 5.35 5.90 2.20 2.63 3.05 0.50 0.85 1.20 5.10 5.70 6.30 0.50 1.10 1.70 3.50 4.00 4.50 2.30 0.35 0.50 0.65 Anachip Corp. www.anachip.com.tw 5/5 C F E1 Rev. 1.0 Sep 8, 2005 |
Price & Availability of AF60N03
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |